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this is information on a product in full production. april 2015 docid025187 rev 4 1/16 16 stgw60h65fb STGWT60H65FB trench gate field-stop igbt, hb series 650 v, 60 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 1.6 v (typ.) @ i c = 60 a ? tight parameters distribution ? safe paralleling ? low thermal resistance applications ? photovoltaic inverters ? high frequency converters description these are igbt devices developed using an advanced proprietary trench gate and field-stop structure. the devices are part of the new hb series of igbts which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. furthermore, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. c (2, tab) e (3) g (1) to-247 1 2 3 to-3p 1 2 3 tab table 1. device summary order code marking package packing stgw60h65fb gw60h65fb to-247 tube STGWT60H65FB gwt60h65fb to-3p tube www.st.com
contents stgw60h65fb, STGWT60H65FB 2/16 docid025187 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.1 to-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-3p package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid025187 rev 4 3/16 stgw60h65fb, STGWT60H65FB electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 650 v i c continuous collector current at t c = 25 c 80 (1) 1. current level is limited by bond wires. a continuous collector current at t c = 100 c 60 i cp (2) 2. pulse width limited by ma ximum junction temperature. pulsed collector current 240 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 375 w t stg storage temperature -55 to 150 c t j operating junction temperature -55 to 175 table 3. thermal data symbol parameter value unit r thj-c thermal resistance junction-case 0.4 c/w r thj-a thermal resistance junction-ambient 50
electrical characteristics stgw60h65fb, STGWT60H65FB 4/16 docid025187 rev 4 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 650 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 60 a 1.60 2.0 v v ge = 15 v, i c = 60 a t j = 125 c 1.75 v ge = 15 v, i c = 60 a t j = 175 c 1.85 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 650 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -7792- pf c oes output capacitance - 262 - c res reverse transfer capacitance -158- q g total gate charge v cc = 520 v, i c = 60 a, v ge = 15 v, see figure 23 -306- nc q ge gate-emitter charge - 126 - q gc gate-collector charge - 58 -
docid025187 rev 4 5/16 stgw60h65fb, STGWT60H65FB electrical characteristics table 6. switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v, see figure 22 -66 ns t r current rise time - 38 - ns (di/dt) on turn-on current slope - 1216 a/s t d(off) turn-off delay time 210 ns t f current fall time - 20 - ns e on (1) 1. energy loss includes reverse recovery of the exte rnal diode. the diode is the same as the co-packaged stgw60h65dfb. turn-on switching loss - 1590 - j e off (2) 2. turn-off loss also includes the tail of the collector current. turn-off switching loss - 900 - j e ts total switching loss - 2490 - j t d(on) turn-on delay time v ce = 400 v, i c = 60 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 22 -59 ns t r current rise time - 40 - ns (di/dt) on turn-on current slope - 1230 a/s t d(off) turn-off delay time 242 ns t f current fall time - 147 - ns e on (1) turn-on switching loss - 2860 - j e off (2) turn-off switching loss - 1255 - j e ts total switching loss - 4115 - j
electrical characteristics stgw60h65fb, STGWT60H65FB 6/16 docid025187 rev 4 2.1 electrical characteristics (curve) figure 2. output characteristics (t j = 25c) figure 3. output characteristics (t j = 175c) *,3')65 , & $ 9 &( 9 9 *6 9 9 *6 9 9 *6 9 *,3')65 , & $ 9 &( 9 9 *6 9 9 *6 9 9 *6 9 9 *6 9 figure 4. transfer characteristics figure 5. collector current vs. case temperature *,3')65 , & $ 9 *( 9 9 &( 9 7 m ?& 7 m ?& i c 60 40 20 0 0 50 t c (c) 75 (a) 25 100 80 125 150 v ge = 15v, t j = 175 c gipd270820131347fsr figure 6. power dissipation vs. case temperature figure 7. v ce(sat) vs. junction temperature p tot 300 200 100 0 0 50 t c (c) 75 (w) 25 100 125 150 v ge = 15v, t j = 175 c gipd270820131401fsr v ce(sat) 1.8 1.6 1.4 1.2 -50 t j (c) (v) 100 2.0 050 2.2 150 2.4 2.6 v ge = 15v i c = 120a i c = 60a i c = 30a gipd021020131457fsr
docid025187 rev 4 7/16 stgw60h65fb, STGWT60H65FB electrical characteristics figure 8. v ce(sat) vs. collector current figure 9. forward bias safe operating area v ce(sat) 1.4 1.2 020 i c (a) (v) 40 60 80 2.2 2.0 1.8 1.6 v ge = 15v t j = 175c t j = 25c t j = -40c 2.4 100 gipd270820131423fsr , & $ 9 &( 9 9 &(vdw olplw 7 m ? ?& 7 f ?& 9 *( 9 vlqjohsxovh pv ?v ?v ?v *,3*$/6 figure 10. normalized v (br)ces vs. junction temperature figure 11. normalized v ge(th) vs. junction temperature v (br)ces (norm) 1.1 1.0 0.9 -50 t j (c) 0 50 100 150 i c = 2ma gipd280820131415fsr v ge(th) (norm) 0.8 0.7 0.6 -50 t j (c) 0 50 100 150 0.9 1.0 i c = 1ma gipd280820131503fsr figure 12. gate charge vs. gate-emitter voltage figure 13. switching loss vs temperature v ge (v) 4 2 0 0 q g (nc) 50 100 150 200 6 8 250 300 350 10 12 14 v cc = 520v, i c = 60a i g = 1ma gipd280820131507fsr e (j) 1800 1000 200 25 t j (c) 50 75 100 125 2600 v cc = 400v, v ge = 15v r g = 10, i c = 60a 150 e off e on gipd290820131623fsr
electrical characteristics stgw60h65fb, STGWT60H65FB 8/16 docid025187 rev 4 figure 14. switching loss vs gate resistance figure 15. switching loss vs collector current e(j) 2100 1300 500 2 r g () 610 2900 v cc = 400v, v ge = 15v i c = 60a, t j = 175 c 14 18 e off e on gipd280820131527fsr e (j) 2000 1000 0 0 i c (a) 20 40 60 80 3000 4000 5000 6000 7000 v cc = 400v, v ge = 15v r g = 10, t j = 175c 100 e off e on gipd280820131538fsr figure 16. switching loss vs collector emitter voltage figure 17. switching times vs collector current e (j) 2300 1300 300 150 v ce (v) 250 350 450 3300 t j = 175c, v ge = 15v r g = 10, i c = 60a e off e on 4300 gipd280820131554fsr t (ns) 100 10 1 0 i c (a) 20 40 60 80 t j = 175c, v ge = 15v r g = 10, v cc = 400v 100 t f t doff t don t r gipd280820131613fsr figure 18. switching times vs gate resistance figure 19. capacitance variations t (ns) 100 10 r g () 48 t j = 175c, v ge = 15v i c = 60a, v cc = 400v 12 t f t doff 16 t don t r 20 gipd280820131622fsr c(pf) 1000 100 10 0.1 v ce (v) 110 10000 c ies c oes c res 100 f = 1 mhz gipd280820131518fsr
docid025187 rev 4 9/16 stgw60h65fb, STGWT60H65FB electrical characteristics figure 20. collector current vs. switching frequency figure 21. thermal impedance 20 40 60 80 100 110 ic (a) f (khz) g rectangular current shape, (duty cycle=0.5, v cc = 400v, r =10 , v ge = 0/15 v, t j =175c) tc=80 c tc=100 c gipd080120151105fsr zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
test circuits stgw60h65fb, STGWT60H65FB 10/16 docid025187 rev 4 3 test circuits figure 22. test circuit for inductive load switching figure 23. gate charge test circuit figure 24. switching waveform am01504v1 am01505v1 k k k k k k am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10%
docid025187 rev 4 11/16 stgw60h65fb, STGWT60H65FB package information 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. 4.1 to-247 package information figure 25. to-247 package outline 0075325_h
package information stgw60h65fb, STGWT60H65FB 12/16 docid025187 rev 4 table 7. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid025187 rev 4 13/16 stgw60h65fb, STGWT60H65FB package information 4.2 to-3p package information figure 26. to-3p package outline 8045950_b
package information stgw60h65fb, STGWT60H65FB 14/16 docid025187 rev 4 table 8. to-3p mechanical data dim. mm min. typ. max. a 4.60 4.80 5 a1 1.45 1.50 1.65 a2 1.20 1.40 1.60 b 0.80 1.00 1.20 b1 1.80 2.00 2.20 b2 2.80 3.00 3.20 c 0.55 0.60 0.75 d 19.70 19.90 20.10 d1 13.70 13.90 14.10 e 15.40 15.60 15.80 e1 13.40 13.60 13.80 e2 9.40 9.60 9.90 e 5.15 5.45 5.75 l 19.80 20 20.20 l1 3.30 3.50 3.70 l2 18.20 18.40 18.60 ?p 3.30 3.40 3.50 ?p1 3.10 3.20 3.30 q 4.80 5 5.20 q1 3.60 3.80 4
docid025187 rev 4 15/16 stgw60h65fb, STGWT60H65FB revision history 5 revision history table 9. document revision history date revision changes 30-aug-2013 1 initial release. 28-feb-2014 2 updated title and features in cover page. 09-jan-2015 3 updated features in cover page, table 2: absolute maximum ratings , table 4: static characteristics and table 6: switching characteristics (inductive load) . updated figure 5: collector current vs. case temperature , figure 6: power dissipation vs. case temperature , figure 8: v ce(sat) vs. collector current , figure 17: switching times vs collector current , figure 18: switching times vs gate resistance and figure 19: capacitance variations . added figure 20: collector current vs. switching frequency . updated section 4: package information . minor text changes. 01-apr-2015 4 text edits throughout document updated table 2: absolute maximum ratings updated table 4: static characteristics updated table 6: switching characteristics (inductive load) updated section 2.1: electrical characteristics (curve) .
stgw60h65fb, STGWT60H65FB 16/16 docid025187 rev 4 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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